The F6502 is an 8-element transmitter silicon IC designed using a SiGe BiCMOS process for Ka-Band SATCOM (27 to 31GHz) phased array applications. The core IC has 6-bit phase control coupled with more than 35dB gain control on each channel to achieve fine beam steering and gain compensation between radiating elements. The device has 24dB nominal gain and 13dBm OP1dB. The core chip achieves an RMS phase error of 3° and RMS gain error of 0.4dB over the frequency of operation.

The chip operates at 2.1V to 2.5 V and features ESD protection on all pins. The core design includes standard SPI protocol that operates up 50MHz with fast-beam switching, fast beam-state loading and fast four on-chip beam storage.

Features

  • 27–31GHz operation
  • 8 radiation elements
  • 20ns typical gain and phase settling time
  • 3° typical RMS phase error
  • 0.4dB typical RMS gain error
  • 35dB gain attenuation range
  • 5-bit chip address
  • Integrated PTAT with external biasing
  • Internal temperature sensor
  • Up to 50MHz SPI control
  • Programmable on-chip memory

Product Options

注文可能な製品ID Part Status Pkg. Code Pkg. Type Lead Count (#) Temp. Grade Carrier Type 購入/サンプル
F6502 Preview
Availability

技術資料

タイトル 他の言語 タイプ 形式 サイズ 日付
データシート
F6502 Advance Short-Form Datasheet Short Form Datasheet PDF 154 KB